| PART |
Description |
Maker |
| TPCP8504 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| 2SC5713 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| MT6L04AE |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT4S32U |
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
|
Toshiba Semiconductor
|
| 2SC2710-Y |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
|
Toshiba Semiconductor
|
| RN1224 RN1223 RN1227 RN1221 RN1222 RN1225 RN1226 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1011 RN1010 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1211 RN1210 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC1815 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
|
Toshiba Semiconductor
|
